Photodiode PIN Chip 2-Pin

Silicon PIN devices are effective detectors of nuclear and electromagnetic radiation. This includes gamma radiation, electrons, and X-rays. The detectors can be used across the temperature range of -55 o C to +175 o C instead of being restricted to use at low temperatures. The absorbed radiation produces electron-hole pairs in the space charge region. These charges are swept out by the applied field and result in a current flow proportional to the rate of absorbed radiation. The Microsemi UM9441 series utilizes high resistivity material and is designed to have a uniform area mesa structure to define the active volume. The current sensitivity of this device is proportional only to the I-region volume and is independent of temperature so long as applied voltage exceeds the saturation voltage. This structure also minimizes the effects of permanent damage caused by neutrons and other high energy radiation. Experiments on devices of the UM9441 design show no degradation in gamma sensitivity resulting from a total dose of 1014 neutrons/cm2 of 1 MeV equivalent.

• High Photocurrent Sensitivity
• High Reliability Construction
• Fast Rise Time
• Wide Dynamic Range
• Hardness to Neutron Bombardment
• Low operating Voltage