IGBTs

These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

• High speed switching
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Short-circuit rated
• Ultrafast soft recovery antiparallel diode