IGBTs
EconoDUAL™ 3 1200V dual IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled Diode, NTC and PressFIT Contact Technology
- Low VCE sat
- Tvj op = 150°C
- VCE sat with positive Temperature Coefficient
- High Power Density
- Isolated Base Plate
- Standard Housing
Характеристики
| Бренд | Infineon |
|---|---|
| Рабочая температура | -40 to 150 °C |
| Schedule B | 8542330000 |
| HTSN | 8542330001 |
| Maximum G | ±20 V |
| Упаковка | Tray |
| Channel Type | N |
| Maximum C | 995 A |
| Family | FF600R12ME4_B11 |
| Configuration | Dual |
| Maximum C | 1200 V |
SKU: FF600R12ME4B11BPSA1