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IGBTs

EconoDUAL™ 3 1200V dual IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled Diode, NTC and PressFIT Contact Technology
  • Low VCE sat
  • Tvj op = 150°C
  • VCE sat with positive Temperature Coefficient
  • High Power Density
  • Isolated Base Plate
  • Standard Housing

规格参数

Brand Infineon
Operating temperature -40 to 150 °C
Schedule B 8542330000
HTSN 8542330001
Maximum G ±20 V
Packaging Tray
Channel Type N
Maximum C 995 A
Family FF600R12ME4_B11
Configuration Dual
Maximum C 1200 V
SKU: FF600R12ME4B11BPSA1