SD56060

The device is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. It is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for applications from 1 to 1000 MHz.

• Excellent thermal stability
• Common source configuration Push-pull
• POUT: 60 W with 16 dB gain @ 860 MHz
• BeO-free package