Transistor MOSFET Array Dual P-Channel 55V 3.4A 8-Pin SOIC T/R
These HEXFET Power MOSFET"s in a Dual SO-8 package utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET"s are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
- Advanced Process Technology
- Ultra Low On-Resistance
- Dual P Channel MOSFET
- Surface Mount
- Available in Tape & Reel
- 150°C Operating Temperature
- Lead-Free
Характеристики
| Бренд | Infineon |
|---|---|
| Typical R | 10 ns |
| Typical T | 14 ns |
| Maximum C | 3.4 A |
| Описание продукта | 5 x 4 x 1.5 mm |
| Maximum G | ±20 V |
| Max Proce | 260 |
| Rds On | 105@10V mOhm |
| Channel Type | Dual P |
| Supplier | SOIC |
| Msl Level | MSL 1 - Unlimited |
| Typical T | 43 ns |
| Maximum D | 55 V |
| Typical F | 22 ns |
| Schedule B | 8541290080 |
| HTSN | 8541290095 |
SKU: IRF7342QTRPBF