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Transistor MOSFET Array Dual P-Channel 30V 3.2A 8-Pin VS T/R

Transistor MOSFET Array Dual P-Channel 30V 3.2A 8-Pin VS T/R
  • Low drain-source ON resistance: Rds (ON) = 60 m? (typ.)
  • High forward transfer admittance: |Yfs| = 5.9 S (typ.)
  • Low leakage current: Idss = -10 µA (max) (Vds = -30 V)
  • Enhancement model: Vth = -0.8 to -2.0 V (Vds = -10 V, Id = -1 mA)

Характеристики

Бренд Toshiba
Typical R 5.3 ns
Maximum C 3.2 A
Описание продукта 2.9 x 1.5 x 0.8 mm
Maximum G ±20 V
Rds On 72@10V mOhm
Channel Type Dual P
Supplier VS
Maximum D 30 V
Рабочая температура -55 to 150 °C
Channel Mode Enhancement
Typical F 8.4 ns
Schedule B 8541290080
HTSN 8541290095
Страна происхождения Malaysia
SKU: TPCF8304(TE85L,F,M) Поставщик: по запросу