Transistor MOSFET Array Dual P-CH 6-Pin CSP T/R

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two common drain P-channel MOSFETs, which enables bidirectional current flow, on Fairchild"s advanced 1.5V PowerTrench process with state of the art ¡°low pitch¡± WL-CSP packaging process, the FDZ1905PZ minimizes both PCB space and rS1S2(on). This advanced WL-CSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rS1S2(on).

• Max rS1S2(on) = 126mO at VGS = -4.5V, IS1S2 = -1A
• Max rS1S2(on) = 141mO at VGS = -2.5V, IS1S2 = -1A
• Max rS1S2(on) = 198mO at VGS = -1.8V, IS1S2 = -1A
• Max rS1S2(on) = 303mO at VGS = -1.5V, IS1S2 = -1A
• Occupies only 1.5 mm² of PCB area, less than 50% of the area of 2 x 2 BGA
• Ultra-thin package: less than 0.65 mm height when mounted to PCB
• High power and current handling capability
• HBM ESD protection level > 4kV (Note 3)
• RoHS compliant