Transistor MOSFET Array Dual P-CH 30V 2.3A 8-Pin SOIC T/R
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
- Generation V Technology
- Ultra Low On-Resistance
- Dual P-Channel MOSFET
- Surface Mount
- Very Low Gate Charge and Switching Losses
- Fully Avalanche Rated
- Lead-Free
Характеристики
| Бренд | Infineon |
|---|---|
| Typical R | 14 ns |
| Typical T | 9.7 ns |
| Maximum C | 2.3 A |
| Описание продукта | 5 x 4 x 1.5 mm |
| Maximum G | ±20 V |
| Max Proce | 260 |
| Rds On | 0.25@10V Ohm |
| Channel Type | Dual P |
| Supplier | SOIC |
| Msl Level | MSL 1 - Unlimited |
| Typical T | 20 ns |
| Maximum D | 30 V |
| Рабочая температура | -55 to 150 °C |
| Channel Mode | Enhancement |
| Typical F | 6.9 ns |
| Maximum P | 2 W |
| Schedule B | 8541290080 |
| HTSN | 8541290095 |
SKU: IRF9953TRPBF