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Transistor MOSFET Array Dual P-CH 25V 2.5A 8-Pin SOIC T/R

This miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a low reverse recovery time. These devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

Характеристики

Бренд ON Semiconductor
Typical R 40|29 ns
Maximum C 2.5 A
Описание продукта 5 x 4 x 1.5 mm mm
Maximum G ±20 V
Max Proce 260 °C
Rds On 0.25@10V Ohm
Channel Type P
Supplier SOIC N
Msl Level MSL 1 - Unlimited
Maximum D 25 V
Рабочая температура -55 to 150 °C
Channel Mode Enhancement
Typical F 41|28 ns
Maximum P 2 W
Schedule B 8541290080
HTSN 8541290095
Страна происхождения United States
Typical T 53 ns
Typical T 20 ns
Maximum C 2.5 A
Maximum C 2.5 A
Typical T 53 ns
Typical T 13 ns
SKU: MMDF2P02ER2G Поставщик: по запросу