Transistor MOSFET Array Dual P-CH 20V 4.5A 8-Pin DFN2020-6 T/R
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- Low threshold voltage
- Very fast switching
- Trench MOSFET technology
- 2 kV ElectroStatic Discharge (ESD) protection
Характеристики
| Бренд | Nexperia |
|---|---|
| Typical R | 15 ns |
| Typical T | 7 ns |
| Maximum C | 4.5 A |
| Описание продукта | 2 x 2 x 0.61 mm mm |
| Maximum G | 8 V |
| Max Proce | 260 °C |
| Rds On | 67@4.5V mOhm |
| Channel Type | Dual P |
| Supplier | HUSON EP |
| Msl Level | 1 |
| Typical T | 41 ns |
| Maximum D | 20 V |
| Рабочая температура | -55 to 150 °C |
| Channel Mode | Enhancement |
| Typical F | 14 ns |
| Maximum P | 1210 mW |
| Schedule B | 8541210080 |
| HTSN | 8541210075 |
| Страна происхождения | Китай |
| Lead Finish | Tin |
SKU: PMDPB58UPE,115