Transistor MOSFET Array Dual P-CH 20V 3A 6-Pin MicroFET T/R
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2x2 package offers exceptional thermal performance for it"s physical size and is well suited to linear mode applications.
- -3.0 A, -20V.
- R DS(ON) = 120 m @ V GS = -4.5 V
- R DS(ON) = 160 m @ V GS = -2.5 V
- R DS(ON) = 240 m @ V GS = -1.8 V
- Low Profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm
- RoHS Compliant
- Free from halogenated compounds and antimony oxides
Характеристики
| Бренд | ON Semiconductor |
|---|---|
| Typical R | 11 ns |
| Typical T | 15 ns |
| Maximum C | 3 A |
| Описание продукта | 2 x 2 x 0.95 mm mm |
| Maximum G | ±8 V |
| Max Proce | 260 °C |
| Rds On | 120@4.5V mOhm |
| Channel Type | Dual P |
| Supplier | MLP EP |
| Msl Level | MSL 1 - Unlimited |
| Typical T | 9 ns |
| Maximum D | 20 V |
| Рабочая температура | -55 to 150 °C |
| Channel Mode | Enhancement |
| Typical F | 6 ns |
| Maximum P | 1.8 W |
| Schedule B | 8541290080 |
| HTSN | 8541290095 |
| Страна происхождения | Thailand |
SKU: FDMA1027P