Transistor MOSFET Array Dual P-CH 20V 3.7A 8-Pin DFN2020-6 T/R
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- 1.8 V RDSon rated for low voltage gate drive
- Trench MOSFET technology
- Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
- Exposed drain pad for excellent thermal conduction
Характеристики
| Бренд | Nexperia |
|---|---|
| Typical R | 14 ns |
| Typical T | 6 ns |
| Maximum C | 3.7 A |
| Описание продукта | 2.1 x 2.1 x 0.61 mm |
| Maximum G | 12 V |
| Max Proce | 260 °C |
| Channel Type | Dual P |
| Supplier | HUSON EP |
| Msl Level | MSL 1 - Unlimited |
| Typical T | 120 ns |
| Maximum D | 20 V |
| Рабочая температура | -55 to 150 °C |
| Channel Mode | Enhancement |
| Typical F | 50 ns |
| Maximum P | 1100 mW |
| Schedule B | 8541210080 |
| HTSN | 8541210095 |
| Страна происхождения | Китай |
SKU: PMDPB80XP,115