Transistor MOSFET Array Dual P-CH 20V 2.2A 6-Pin TSOP T/R
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5850 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and RDS(on) reduction enables an increase in current-handling capability.
- Ultra Low On-Resistance
- Dual P-Channel MOSFET
- Surface Mount
- Available in Tape & Reel
- Low Gate Charge
- Lead-Free
- Halogen-Free
Характеристики
| Бренд | Infineon |
|---|---|
| Typical R | 14 ns |
| Typical T | 8.3 ns |
| Maximum C | 2.2 A |
| Описание продукта | 3 x 1.75 x 1.3 mm mm |
| Maximum G | ±12 V |
| Max Proce | 260 |
| Rds On | 0.135@4.5V Ohm |
| Channel Type | Dual P |
| Supplier | Micro |
| Msl Level | MSL 1 - Unlimited |
| Typical T | 31 ns |
| Maximum D | 20 V |
| Рабочая температура | -55 to 150 °C |
| Channel Mode | Enhancement |
| Typical F | 28 ns |
| Maximum P | 0.96 W |
| Schedule B | 8541290080 |
| HTSN | 8541290095 |
SKU: IRF5850TRPBF