Transistor MOSFET Array Dual P-CH 15V 1.17A 8-Pin SOIC T/R
The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have been optimized, by means of the Texas Instruments LinBiCMOSTM process, for 3-V or 5-V power distribution in battery-powered systems. With a maximum VGS(th) of -1.5 V and an IDSS of only 0.5 uA, the TPS1120 is the ideal high-side switch for low-voltage portable battery-management systems, where maximizing battery life is a primary concern. Because portable equipment is potentially subject to electrostatic discharge (ESD), the MOSFETs have built-in circuitry for 2-kV ESD protection. End equipment for the TPS1120 includes notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, and PCMCIA cards. For existing designs, the TPS1120D has a pinout common with other p-channel MOSFETs in small-outline integrated circuit SOIC packages. The TPS1120 is characterized for an operating junction temperature range, TJ, from -40°C to 150°C.
Low rDS(on) . . . 0.18 O at VGS = -10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = -1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015
Характеристики
| Бренд | Texas Instruments |
|---|---|
| Typical R | 10 ns |
| Typical T | 4.5 ns |
| Maximum C | 1.17 A |
| Описание продукта | 5 x 4 x 1.5 mm mm |
| Maximum G | 2 V |
| Max Proce | 260 °C |
| Rds On | 180@10V mOhm |
| Channel Type | Dual P |
| Supplier | SOIC |
| Msl Level | MSL 1 - Unlimited |
| Typical T | 13 ns |
| Maximum D | 15 V |
| Рабочая температура | -40 to 125 °C |
| Channel Mode | Enhancement |
| Typical F | 2 ns |
| Maximum P | 840 mW |
| Schedule B | 8541210080 |
| HTSN | 8542390001 |
| Страна происхождения | Taiwan |
SKU: TPS1120D