Transistor MOSFET Array Dual P-CH 100V 13A 8-Pin PowerFLAT T/R
This device is a dual P-channel Power MOSFET developed using the 6thgeneration of STripFET DeepGATE technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
RDS(on)* Qgindustry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses
Характеристики
| Бренд | STMicroelectronics |
|---|---|
| Typical R | 4.8 ns |
| Typical T | 10.5 ns |
| Maximum C | 13 A |
| Описание продукта | 5.2 x 6.15 x 0.95(Max) mm |
| Maximum G | ±20 V |
| Max Proce | 260 °C |
| Rds On | 0.18@10V Ohm |
| Channel Type | Dual P |
| Supplier | PowerFLAT |
| Msl Level | 1 |
| Typical T | 24 ns |
| Maximum D | 100 V |
| Рабочая температура | -55 to 150 °C |
| Channel Mode | Enhancement |
| Typical F | 4.5 ns |
| Maximum P | 62.5 W |
| Schedule B | 8541290080 |
| HTSN | 8541290075 |
| Страна происхождения | Китай |
SKU: STL13DP10F6