Transistor MOSFET Array Dual N-Channel 30V 6.2A 8-Pin SOIC
The FETKY family of Co-Pack HEXFET MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Advanced HEXFET MOSFETs combined with low forward drop Schottky results in an extremely efficient device suitable for a wide variety of portable electronics applications. The SO-8 has been modified through a customized lead frame for enhanced characteristics and multiple die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. Internal connections enable easier board layout design with reduced stray inductance.
- Co-Pack Dual N-Channel HEXFET Power MOSFET and Scottky Diode
- Ideal for Synchronous Buck DC-DC converters Up to 5A Peak Output
- Low Conduction Losses
- Low Switching Losses
- Low Vt Schottky Rectifier
- Lead-Free
Характеристики
| Бренд | Infineon |
|---|---|
| Typical R | 13.8@Q 1|16.4@Q 2 ns |
| Описание продукта | 5 x 4 x 1.5 mm |
| Maximum G | ±20 V |
| Max Proce | 260 |
| Rds On | 38@4.5V|32@4.5V mOhm |
| Channel Type | Dual N |
| Supplier | SOIC |
| Msl Level | MSL 1 - Unlimited |
| Maximum D | 30 V |
| Рабочая температура | -55 to 150 °C |
| Channel Mode | Enhancement |
| Typical F | 8@Q 1|5.2@Q 2 ns |
| Schedule B | 8541290080 |
| HTSN | 8541290095 |
| Typical T | 14.7|14.6 ns |
| Typical T | 7.2|10.4 ns |
| Maximum C | 6.2 A |
SKU: IRF7901D1PBF