Transistor MOSFET Array Dual N-Channel 20V 0.8A 6-Pin ES
Transistor MOSFET Array Dual N-Channel 20V 0.8A 6-Pin ES
- 1.5-V gate drive voltage
- Low drain-source on-resistance
- Rds(ON) = 235 m? (max) (@Vgs = 4.5 V, Id = 800 mA)
- Rds(ON) = 300 m? (max) (@Vgs = 2.5 V, Id = 600 mA)
- Rds(ON) = 480 m? (max) (@Vgs = 1.8 V, Id = 200 mA)
- Rds(ON) = 840 m? (max) (@Vgs = 1.5 V, Id = 50 mA)
Характеристики
| Бренд | Toshiba |
|---|---|
| Описание продукта | 1.6 x 1.2 x 0.55 |
| Maximum G | ±8 V |
| Rds On | 235@4.5V mOhm |
| Channel Type | Dual N |
| Supplier | ES6 |
| Maximum D | 20 V |
| Рабочая температура | -55 to 150 °C |
| Channel Mode | Enhancement |
| Schedule B | 8541210080 |
| HTSN | 8541210095 |
| Страна происхождения | Thailand |
| Typical T | 5.5 ns |
| Typical T | 8.5 ns |
| Maximum C | 0.8 A |
SKU: SSM6N56FE,LM