Transistor MOSFET Array Dual N-CH 80V 40A 12-Pin PQFN T/R
This device includes two 80V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low r DS(on) /Qg FOM silicon.
- Max r DS(on) = 8.2 m O at V GS = 10 V, I D = 11 A
- Max r DS(on) = 11 m O at V GS = 8 V, I D = 9.5 A
- Ideal for flexible layout in primary side of bridge topology
- Termination is Lead-free and RoHS Compliant
- 100% UIL tested
- Kelvin High Side MOSFET drive pin-out capability
Характеристики
| Бренд | ON Semiconductor |
|---|---|
| Typical R | 12 ns |
| Описание продукта | 5.1(Max) x 3.4(Max) x 0.75(Max) mm |
| Maximum G | ±20 V |
| Max Proce | 260 °C |
| Rds On | 8.2@10V mOhm |
| Channel Type | Dual N |
| Supplier | PQFN |
| Msl Level | MSL 1 - Unlimited |
| Maximum D | 80 V |
| Рабочая температура | -55 to 150 °C |
| Channel Mode | Enhancement |
| Typical F | 8.9 ns |
| Maximum P | 38 W |
| Schedule B | 8541290080 |
| HTSN | 8541290095 |
| Страна происхождения | United States |
| Typical T | 26 ns |
| Typical T | 15 ns |
| Maximum C | 40 A |
SKU: FDMD8280