Transistor MOSFET Array Dual N-CH 6V 30mA 6-Pin SOT-363 T/R
Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins plus an integrated switch.
- Dual device
- High forward transfer admittance
- High forward transfer admittance to input capacitance ratio
- Internal switch to save external components
- Superior cross-modulation performance during AGC
- Two low noise gain controlled amplifiers in a single package
Характеристики
| Бренд | NXP |
|---|---|
| Описание продукта | 2.2 x 1.35 x 1 mm mm |
| Maximum G | 6 V |
| Max Proce | 260 |
| Channel Type | Dual N |
| Supplier | SOT-363 |
| Maximum D | 6 V |
| Рабочая температура | -65 to 150 °C |
| Channel Mode | Enhancement |
| Maximum P | 180 mW |
| Schedule B | 8541210080 |
| HTSN | 8541210075 |
| Maximum C | 30 mA |
SKU: BF1207,115