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Transistor MOSFET Array Dual N-CH 62V 3.3A 8-Pin SOIC T/R

This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1. A drain to source voltage feedback signal and 2. A gate drive disable control function that previously required external discrete circuitry. Including these functions within the MOSFET saves printed circuit board space. The drain to source voltage feedback function provides a 5V level output whenever the drain to source voltage is above 62V. This can monitor the time an inductive load takes to dissipate its stored energy. Multiple feedback signals can be wired “OR’d” together to a single input of the monitoring circuit. The gate disable function allows the device to be turned off independent of the drive signal on the gate. This function permits a second control circuit the ability to deactivate the load if necessary. It can also be wired “OR’d” allowing multiple devices to be controlled by a single open collector / drain control transistor.
  • 62V, 132m, 5V Logic Level Gate Dual MOSFET in SO-8
  • 5V Logic Level feedback signal of the drain to source voltage. Multiple devices can be wired "OR"d" to a single monitoring circuit input.
  • Gate Drive Disable Input. Multiple devices controllable bya single disable transistor.
  • Qualified to AEC Q101

Характеристики

Бренд ON Semiconductor
Typical R 1200 ns
Описание продукта 5 x 4 x 1.5 mm mm
Maximum G ±20 V
Max Proce 260 °C
Rds On 0.11@10V Ohm
Channel Type Dual N
Supplier SOIC N
Msl Level MSL 1 - Unlimited
Maximum D 62 V
Рабочая температура -55 to 150 °C
Channel Mode Enhancement
Typical F 3500 ns
Maximum P 2.27 W
Schedule B 8541290080
HTSN 8541290095
Страна происхождения United States
Screening Level Automotive
Typical T 8700 ns
Typical T 630 ns
Maximum C 3.3 A
SKU: FDSS2407 Поставщик: по запросу