Transistor MOSFET Array Dual N-CH 60V 57A 2-Pin PowerFLAT T/R
This dual N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, also reducing internal capacitance and gate charge for faster and more efficient switching.
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
- VDS: 60V
Характеристики
| Бренд | STMicroelectronics |
|---|---|
| Typical R | 15.3 ns |
| Описание продукта | 5 x 6 x 0.8 mm |
| Maximum G | ±20 V |
| Max Proce | 260 °C |
| Rds On | 11@10V mOhm |
| Channel Type | Dual N |
| Supplier | PowerFLAT |
| Msl Level | 1 |
| Maximum D | 60 V |
| Рабочая температура | -55 to 175 °C |
| Channel Mode | Enhancement |
| Typical F | 8 ns |
| Maximum P | 62.5 W |
| Schedule B | 8541290080 |
| HTSN | 8541290075 |
| Страна происхождения | Китай |
| Screening Level | Industrial |
| Typical T | 19.4 ns |
| Typical T | 14.5 ns |
| Maximum C | 57 A |
SKU: STL50DN6F7