Transistor MOSFET Array Dual N-CH 6-Pin CSP T/R
This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-cell lithium-ion battery applications.
2.5V drive 2kV ESD HBM Common-Drain Type ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS compliance
Характеристики
| Бренд | ON Semiconductor |
|---|---|
| Typical R | 570 ns |
| Описание продукта | 3.54 x 1.77 x 0.22 mm |
| Maximum G | ±8 V |
| Max Proce | 260 °C |
| Channel Type | Dual N |
| Supplier | CSP |
| Msl Level | 1 |
| Рабочая температура | -55 to 150 °C |
| Channel Mode | Depletion |
| Typical F | 17700 ns |
| Maximum P | 2.5 W |
| Schedule B | 8541290080 |
| HTSN | 8541290075 |
| Страна происхождения | United States |
| Typical T | 38000 ns |
| Typical T | 80 ns |
| Упаковка | T/R |
| Family | EFC8811R |
SKU: EFC8811R-TF