Transistor MOSFET Array Dual N-CH 450V 0.4A 8-Pin SOIC T/R
The SuperMESH series is obtained through an extreme optimization of STs well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.
TYPICAL RDS(on) = 4.1 STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY GATE CHARGE MINIMIZED
Характеристики
| Бренд | STMicroelectronics |
|---|---|
| Typical R | 4 ns |
| Описание продукта | 5 x 4 x 1.65 mm mm |
| Maximum G | ±30 V |
| Max Proce | 260 °C |
| Rds On | 4.5@10V Ohm |
| Channel Type | Dual N |
| Supplier | SOIC N |
| Msl Level | MSL 1 - Unlimited |
| Maximum D | 450 V |
| Рабочая температура | -65 to 150 °C |
| Channel Mode | Enhancement |
| Typical F | 12 ns |
| Maximum P | 2 W |
| Schedule B | 8541290080 |
| HTSN | 8541290075 |
| Страна происхождения | Китай |
| Typical T | 8.5 ns |
| Typical T | 6.7 ns |
| Maximum C | 0.4 A |
SKU: STS1DNC45