Transistor MOSFET Array Dual N-CH 30V 9.5A 8-Pin SOIC T/R
Transistor MOSFET Array Dual N-CH 30V 9.5A 8-Pin SOIC T/R
- High Density UMOS with Schottky Barrier Diode
- Low Leakage Current at High Temp.
- High Conversion Efficiency
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Utilizes Diodes’ Monolithic DIOFET Technology to Increase Conversion Efficiency
- 100% UIS and Rg Tested
- Lead Free By Design/RoHS Compliant
- "Green" Device
- Qualified to AEC-Q101 Standards for High Reliability
Характеристики
| Бренд | Diodes Inc |
|---|---|
| Typical R | 7.22@Q 1|9.21@Q 2 ns |
| Описание продукта | 4.95 x 3.95 x 1.5 mm mm |
| Maximum G | ±12@Q 1|±25@Q 2 V |
| Max Proce | 260 |
| Rds On | 15@10V|15.8@10V mOhm |
| Channel Type | Dual N |
| Supplier | SOIC |
| Msl Level | MSL 1 - Unlimited |
| Maximum D | 30 V |
| Рабочая температура | -55 to 150 °C |
| Channel Mode | Enhancement |
| Typical F | 5.38|4.94 ns |
| Maximum P | 1.19 W |
| Schedule B | 8541290080 |
| HTSN | 8541290095 |
| Страна происхождения | Китай |
| Typical T | 36.76|20.76 ns |
| Typical T | 6.16|5.05 ns |
| Maximum C | 9.5 A |
SKU: DMG4932LSD-13