Transistor MOSFET Array Dual N-CH 30V 8A/9A 8-Pin SOIC T/R
This device uses the latest advanced design rules of ST’s STrip based technology. The Q1 and Q2 transistors, show respectively, the best gate charge and on-resistance for minimizing the switching and conduction losses. This application specific Power MOSFET has been designed to replace two SO-8 packages in DC-DC converters.
Optimal RDS(on) x Qg trade-off @ 4.5V Conduction losses reduced Switching losses reduced
Характеристики
| Бренд | STMicroelectronics |
|---|---|
| Typical R | 14.5@Q 1|32@Q 2 ns |
| Описание продукта | 5 x 4 x 1.65 mm mm |
| Maximum G | ±16 V |
| Max Proce | 260 °C |
| Rds On | 0.0222@10V|0.015@10V Ohm |
| Channel Type | Dual N |
| Supplier | SOIC N |
| Msl Level | MSL 1 - Unlimited |
| Maximum D | 30 V |
| Рабочая температура | -55 to 150 °C |
| Channel Mode | Enhancement |
| Typical F | 8|3.6 ns |
| Maximum P | 2 W |
| Schedule B | 8541290080 |
| HTSN | 8541290075 |
| Страна происхождения | Китай |
| Typical T | 23|27.8 ns |
| Typical T | 12|8.2 ns |
| Maximum C | 8|9 A |
SKU: STS9D8NH3LL