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Transistor MOSFET Array Dual N-CH 30V 8A 8-Pin SOIC T/R

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
  • Optimal RDS(on)x Qgtrade-off @ 4.5 V
  • Conduction losses reduced
  • Switching losses reduced
  • Характеристики

    Бренд STMicroelectronics
    Typical R 32 ns
    Описание продукта 5 x 4 x 1.65 mm mm
    Maximum G ±16 V
    Max Proce 260 °C
    Rds On 0.020@10V Ohm
    Channel Type Dual N
    Supplier SOIC N
    Msl Level MSL 1 - Unlimited
    Maximum D 30 V
    Рабочая температура -55 to 150 °C
    Channel Mode Enhancement
    Typical F 11 ns
    Maximum P 2 W
    Schedule B 8541290080
    HTSN 8541290075
    Страна происхождения Китай
    Typical T 21 ns
    Typical T 18 ns
    Maximum C 8 A
    SKU: STS8DNF3LL