Transistor MOSFET Array Dual N-CH 30V 6.9A 8-Pin SOIC T/R
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Dual N-Channel MOSFET
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
- Qualified to AEC-Q101 Standards for High Reliability
Характеристики
| Бренд | Diodes Inc |
|---|---|
| Typical R | 7 ns |
| Описание продукта | 5.3 x 4.1 x 1.5 mm mm |
| Maximum G | ±20 V |
| Max Proce | 260 °C |
| Rds On | 20@10V mOhm |
| Channel Type | Dual N |
| Supplier | SOP |
| Msl Level | MSL 1 - Unlimited |
| Maximum D | 30 V |
| Рабочая температура | -55 to 150 °C |
| Channel Mode | Enhancement |
| Typical F | 30 ns |
| Maximum P | 2 W |
| Schedule B | 8541210080 |
| HTSN | 8541290095 |
| Страна происхождения | Китай |
| Typical T | 63 ns |
| Typical T | 11 ns |
| Maximum C | 6.9 A |
SKU: DMN3033LSD-13