Transistor MOSFET Array Dual N-CH 30V 5.7A 8-Pin SOIC T/R
Transistor MOSFET Array Dual N-CH 30V 5.7A 8-Pin SOIC T/R
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFET
- PWM Optimized
- 100 % Rg Tested
- Compliant to RoHS Directive 2002/95/EC
Характеристики
| Бренд | Vishay |
|---|---|
| Typical R | 10 ns |
| Описание продукта | 5 x 4 x 1.55 mm mm |
| Maximum G | ±20 V |
| Max Proce | 260 °C |
| Rds On | 0.022@10V Ohm |
| Channel Type | Dual N |
| Supplier | SOIC N |
| Msl Level | MSL 1 - Unlimited |
| Maximum D | 30 V |
| Рабочая температура | -55 to 150 °C |
| Channel Mode | Enhancement |
| Typical F | 9 ns |
| Maximum P | 1.1 W |
| Schedule B | 8541290080 |
| HTSN | 8541290095 |
| Typical T | 19 ns |
| Typical T | 9 ns |
| Maximum C | 5.7 A |
SKU: Si4804BDY-T1-E3