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Transistor MOSFET Array Dual N-CH 30V 54A/123A 8-Pin Power 56 T/R

Transistor MOSFET Array Dual N-CH 30V 54A/123A 8-Pin Power 56 T/R

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
  • Q1: N-Channel
    • Max rDS(on) = 8 mO at VGS = 10 V, ID = 13 A
    • Max rDS(on) = 11 mO at VGS = 4.5 V, ID = 11 A
  • Q2: N-Channel
    • Max rDS(on) = 2.8 mO at VGS = 10 V, ID = 23 A
    • Max rDS(on) = 3.5 mO at VGS = 4.5 V, ID = 21 A
  • Low inductance packaging shortens rise/fall times, resulting in lower switching losses
  • MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
  • RoHS Compliant

Характеристики

Бренд ON Semiconductor
Typical R 2.5@Q 1|4@Q 2 ns
Описание продукта 5 x 6 x 0.75 mm
Maximum G ±20 V
Max Proce 260 °C
Rds On 8@10V|2.8@10V mOhm
Channel Type Dual N
Supplier Power 56
Msl Level MSL 1 - Unlimited
Maximum D 30 V
Рабочая температура -55 to 150 °C
Channel Mode Enhancement
Typical F 2.2@Q 1|3@Q 2 ns
Maximum P 2.2|2.5 W
Schedule B 8541290080
HTSN 8541290095
Страна происхождения Philippines
Typical T 20|23 ns
Typical T 8.2|9 ns
Maximum C 54|123 A
SKU: FDMS3686S Поставщик: по запросу