Transistor MOSFET Array Dual N-CH 30V 3.4A 8-Pin SOIC T/R
Dual intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
- Suitable for high frequency applications due to fast switching characteristics
- Suitable for logic level gate drive sources
- Suitable for low gate drive sources
Характеристики
| Бренд | Nexperia |
|---|---|
| Typical R | 8 ns |
| Описание продукта | 5 x 4 x 1.45 mm mm |
| Maximum G | 20 V |
| Max Proce | 260 °C |
| Rds On | 100@10V mOhm |
| Channel Type | Dual N |
| Supplier | SOIC |
| Msl Level | MSL 1 - Unlimited |
| Maximum D | 30 V |
| Рабочая температура | -65 to 150 °C |
| Channel Mode | Enhancement |
| Typical F | 15 ns |
| Maximum P | 2 W |
| Schedule B | 8541290080 |
| HTSN | 8541290075 |
| Страна происхождения | Thailand |
| Typical T | 21 ns |
| Typical T | 6 ns |
| Maximum C | 3.4 A |
SKU: PHN210T,118