Transistor MOSFET Array Dual N-CH 30V 11A 8-Pin SOIC Tube
The IRF8513PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8513PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications.
- Low Gate Charge and Low RDS(on)
- Fully Characterized Avalanche Voltage and Current
- 20V VGS Max. Gate Rating
- 100% Tested for RG
- Lead-Free (Qualified to 260°C Reflow)
- RoHS Compliant (Halogen Free)
Характеристики
| Бренд | Infineon |
|---|---|
| Typical R | 8.5@Q 1|10.7@Q 2 ns |
| Описание продукта | 5 x 4 x 1.5 mm mm |
| Maximum G | ±20 V |
| Max Proce | 260 |
| Rds On | 15.5@10V|12.7@10V mOhm |
| Channel Type | Dual N |
| Supplier | SOIC |
| Msl Level | MSL 1 - Unlimited |
| Maximum D | 30 V |
| Рабочая температура | -55 to 175 °C |
| Channel Mode | Enhancement |
| Typical F | 5.7|5 ns |
| Maximum P | 1.5|2.4 W |
| Schedule B | 8541290080 |
| HTSN | 8541290095 |
| Typical T | 8.8|9.3 ns |
| Typical T | 8|8.9 ns |
| Maximum C | 8|11 A |
SKU: IRF8513PBF