Transistor MOSFET Array Dual N-CH 30V 10A/7.2A 8-Pin SOIC T/R
Transistor MOSFET Array Dual N-CH 30V 10A/7.2A 8-Pin SOIC T/R
- DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:
- Low RDS(ON) – minimize conduction losses
- Low VSD – reducing the losses due to body diode conduction
- Low Qrr – lower Qrr of the integrated Schottky reduces body diode switching losses
- Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot through or cross conduction currents at high frequencies
- Avalanche rugged – IAR and EAR rated
- Lead Free, RoHS Compliant
- "Green" Device
- Qualified to AEC-Q101 Standards for High Reliability
Характеристики
| Бренд | Diodes Inc |
|---|---|
| Typical R | 27.8@Q 1|7.9@Q 2 ns |
| Описание продукта | 4.95 x 3.95 x 1.5 mm mm |
| Maximum G | ±20 V |
| Max Proce | 260 |
| Rds On | 12@10V|22@10V mOhm |
| Channel Type | Dual N |
| Supplier | SOIC |
| Msl Level | MSL 1 - Unlimited |
| Maximum D | 30 V |
| Рабочая температура | -55 to 150 °C |
| Channel Mode | Enhancement |
| Typical F | 13.6|3.1 ns |
| Maximum P | 1.19 W |
| Schedule B | 8541290080 |
| HTSN | 8541290095 |
| Страна происхождения | Китай |
| Typical T | 29.7|14.6 ns |
| Typical T | 15.8|2.9 ns |
| Maximum C | 10|7.2 A |
SKU: DMS3017SSD-13