Transistor MOSFET Array Dual N-CH 20V 6.9A 8-Pin SOIC T/R
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Low Input Capacitance
- Low On-Resistance
- Fast Switching Speed
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
- Qualified to AEC-Q101 Standards for High Reliability
Характеристики
| Бренд | Diodes Inc |
|---|---|
| Typical R | 33.3 ns |
| Описание продукта | 4.95(Max) x 3.95(Max) x 1.5(Max) mm |
| Maximum G | ±8 V |
| Max Proce | 260 °C |
| Rds On | 25@4.5V mOhm |
| Channel Type | Dual N |
| Supplier | SOIC |
| Msl Level | MSL 1 - Unlimited |
| Maximum D | 20 V |
| Рабочая температура | -55 to 150 °C |
| Channel Mode | Enhancement |
| Typical F | 53.5 ns |
| Maximum P | 1.4 W |
| Schedule B | 8541100050 |
| HTSN | 8541290095 |
| Страна происхождения | Китай |
| Screening Level | Automotive |
| Typical T | 119.3 ns |
| Typical T | 16.5 ns |
| Maximum C | 6.9 A |
SKU: DMN2029USD-13