Transistor MOSFET Array Dual N-CH 100V 20A 8-Pin PowerFLAT T/R
This device utilizes the 7thgeneration of design rules of ST’s proprietary STripFET technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
N-channel enhancement mode Lower RDS(on)x area vs previous generation 100% avalanche rated
Характеристики
| Бренд | STMicroelectronics |
|---|---|
| Typical R | 3 ns |
| Описание продукта | 5.2 x 6.15 x 0.95(Max) mm |
| Maximum G | ±20 V |
| Max Proce | 260 °C |
| Rds On | 0.067@10V Ohm |
| Channel Type | Dual N |
| Supplier | PowerFLAT |
| Msl Level | 1 |
| Maximum D | 100 V |
| Рабочая температура | -55 to 150 °C |
| Channel Mode | Enhancement |
| Typical F | 4 ns |
| Maximum P | 62.5 W |
| Schedule B | 8541290080 |
| HTSN | 8541290075 |
| Страна происхождения | Китай |
| Typical T | 11 ns |
| Typical T | 6.3 ns |
| Maximum C | 20 A |
SKU: STL20DN10F7