Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-262
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
- Halogen-free According to IEC 61249-2-21 Definition
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Compliant to RoHS Directive 2002/95/EC
- I2PAK (TO-262) package
Характеристики
| Бренд | Vishay |
|---|---|
| Описание продукта | 10.67 x 4.83 x 9.65 mm |
| Рабочая температура | -55 to 150 °C |
| Max Proce | 300 |
| Schedule B | 8541290080 |
| HTSN | 8541290095 |
| Страна происхождения | Китай |
| Channel Type | N |
| Supplier | TO-262 |
| Channel Mode | Enhancement |
| Maximum C | 4.1 A |
| Maximum D | 800 V |
| Maximum G | ±20 V |
| Typical T | 12 ns |
| Typical T | 82 ns |
| Rds On | 3000@10V mOhm |
| Typical F | 30 ns |
| Typical R | 33 ns |
SKU: IRFBE30LPBF