Trans MOSFET N-CH 800V 2A 3-Pin DPAK T/R
These devices are N-channel Power MOSFETs developed using SuperMESH 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency.
TO-220 worldwide best RDS(on) Worldwide best FOM (figure of merit) Ultra low gate charge 100% avalanche tested Zener-protected
Характеристики
| Бренд | STMicroelectronics |
|---|---|
| Описание продукта | 6.6(Max) x 6.2(Max) x 2.4(Max) |
| Рабочая температура | -55 to 150 °C |
| Max Proce | 260 |
| Msl Level | MSL 1 - Unlimited |
| Schedule B | 8541290080 |
| HTSN | 8541290075 |
| Страна происхождения | Китай |
| Channel Type | N |
| Supplier | DPAK |
| Channel Mode | Enhancement |
| Maximum C | 2 A |
| Maximum D | 800 V |
| Maximum G | 30 V |
| Rds On | 4.5@10V Ohm |
SKU: STD2N80K5