Trans MOSFET N-CH 620V 4.2A 3-Pin(2+Tab) DPAK T/R
These devices are made using the SuperMESH3 Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications.
100% avalanche tested Extremely large avalanche performance Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected
Характеристики
| Бренд | STMicroelectronics |
|---|---|
| Описание продукта | 6.6 x 6.2 x 2.4 mm |
| Max Proce | 260 |
| Msl Level | MSL 1 - Unlimited |
| Schedule B | 8541290080 |
| HTSN | 8541290075 |
| Channel Type | N |
| Supplier | DPAK |
| Maximum C | 4.2 A |
| Maximum D | 620 V |
| Maximum G | ±30 V |
| Typical T | 12 ns |
| Typical T | 40 ns |
| Typical F | 21 ns |
| Typical R | 8 ns |
SKU: STD5N62K3