Trans MOSFET N-CH 620V 2.2A 3-Pin(2+Tab) D2PAK T/R
These SuperMESH3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected
Характеристики
| Бренд | STMicroelectronics |
|---|---|
| Описание продукта | 10.4 x 9.35 x 4.6 mm |
| Рабочая температура | -55 to 150 °C |
| Max Proce | 245 |
| Msl Level | MSL 1 - Unlimited |
| Schedule B | 8541290080 |
| HTSN | 8541290075 |
| Страна происхождения | Китай |
| Channel Type | N |
| Supplier | D2PAK |
| Channel Mode | Enhancement |
| Maximum C | 2.2 A |
| Maximum D | 620 V |
| Maximum G | ±30 V |
| Typical T | 8 ns |
| Typical T | 21 ns |
| Rds On | 3600@10V mOhm |
| Typical F | 22 ns |
| Typical R | 4.4 ns |
SKU: STB2N62K3