Trans MOSFET N-CH 600V 8A 3-Pin(2+Tab) D2PAK T/R
This FDmesh II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt avalanche capabilities
Характеристики
| Бренд | STMicroelectronics |
|---|---|
| Описание продукта | 10.4 x 9.35 x 4.6 mm |
| Рабочая температура | -55 to 150 °C |
| Max Proce | 260 |
| Msl Level | MSL 1 - Unlimited |
| Schedule B | 8541290080 |
| HTSN | 8541290075 |
| Channel Type | N |
| Supplier | D2PAK |
| Channel Mode | Enhancement |
| Maximum C | 8 A |
| Maximum D | 600 V |
| Maximum G | ±25 V |
| Typical T | 9.2 ns |
| Typical T | 32 ns |
| Rds On | 600@10V mOhm |
| Typical F | 9.8 ns |
| Typical R | 10 ns |
SKU: STD10NM60ND