Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R
These SuperMESH3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
100% avalanche tested Extremely high dv/dt capability Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected
Характеристики
| Бренд | STMicroelectronics |
|---|---|
| Описание продукта | 6.6 x 6.2 x 2.4 mm |
| Рабочая температура | -55 to 150 °C |
| Schedule B | 8541290080 |
| HTSN | 8541290075 |
| Channel Type | N |
| Supplier | DPAK |
| Channel Mode | Enhancement |
| Maximum C | 2 A |
| Maximum D | 600 V |
| Maximum G | ±30 V |
| Typical T | 10 ns |
| Typical T | 23.5 ns |
| Rds On | 4500@10V mOhm |
| Typical F | 21 ns |
| Typical R | 8.5 ns |
SKU: STD2LN60K3