Trans MOSFET N-CH 55V 131A 3-Pin(2+Tab) D2PAK T/R
Stripe Planar design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
Характеристики
| Бренд | Infineon |
|---|---|
| Описание продукта | 10.67 x 9.65 x 4.83 mm |
| Рабочая температура | -55 to 175 °C |
| Max Proce | 260 |
| Msl Level | MSL 1 - Unlimited |
| Schedule B | 8541290080 |
| HTSN | 8541290095 |
| Страна происхождения | Китай |
| Channel Type | N |
| Supplier | D2PAK |
| Channel Mode | Enhancement |
| Maximum C | 131 A |
| Maximum D | 55 V |
| Maximum G | ±20 V |
| Typical T | 13 ns |
| Typical T | 130 ns |
| Rds On | 5.3@10V mOhm |
| Typical F | 110 ns |
| Typical R | 190 ns |
SKU: IRF1405STRLPBF