Trans MOSFET N-CH 550V 4A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 550V 4A 3-Pin(2+Tab) DPAK T/R
- Low drain-source on-resistance: Rds(ON) = 1.5 ? (typ.)
- High forward transfer admittance: |Yfs| = 2.0 S (typ.)
- Low leakage current: Idss = 10 µA (max) (Vds = 550 V)
- Enhancement mode: Vth = 2.4 to 4.4 V (Vds = 10 V, Id = 1 mA)
Характеристики
| Бренд | Toshiba |
|---|---|
| Описание продукта | 6.6 x 6.1 x 2.3 mm |
| Рабочая температура | -55 to 150 °C |
| Schedule B | 8541290080 |
| HTSN | 8541290095 |
| Страна происхождения | Китай |
| Channel Type | N |
| Supplier | DPAK |
| Channel Mode | Enhancement |
| Maximum C | 4 A |
| Maximum D | 550 V |
| Maximum G | ±30 V |
| Rds On | 1880@10V mOhm |
| Typical F | 8 ns |
| Typical R | 18 ns |
SKU: TK4P55D(T6RSS-Q)