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Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK

This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge Power MOSFETs.These device improvements combined with the proven ruggedness and reliability that characterize Power MOSFETs offer the designer a new power transistor standard for switching applications.
  • Halogen-free According to IEC 61249-2-21 Definition
  • Ultra Low Gate Charge
  • Reduced Gate Drive Requirement
  • Enhanced 30 V VGS Rating
  • Reduced Ciss, Coss, Crss
  • Extremely High Frequency Operation
  • Repetitive Avalanche Rated
  • Compliant to RoHS Directive 2002/95/EC
  • D2PAK (TO-263) package

Характеристики

Бренд Vishay
Описание продукта 10.67 x 9.65 x 4.83 mm
Рабочая температура -55 to 150 °C
Max Proce 260
Msl Level MSL 1 - Unlimited
Schedule B 8541290080
HTSN 8541290095
Страна происхождения Китай
Channel Type N
Supplier D2PAK
Channel Mode Enhancement
Maximum C 8 A
Maximum D 500 V
Maximum G ±30 V
Typical T 12 ns
Typical T 27 ns
Rds On 850@10V mOhm
Typical F 19 ns
Typical R 25 ns
SKU: IRF840LCSPBF Поставщик: по запросу