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Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) DPAK T/R

This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET DeepGATE technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
  • Designed for automotive applications and AEC-Q101 qualified
  • Low gate charge
  • Very low on-resistance
  • High avalanche ruggedness
  • Характеристики

    Бренд STMicroelectronics
    Описание продукта 6.6 x 6.2 x 2.4 mm
    Рабочая температура -55 to 175 °C
    Schedule B 8541290080
    HTSN 8541290075
    Channel Type N
    Supplier DPAK
    Channel Mode Enhancement
    Maximum C 80 A
    Maximum D 40 V
    Maximum G ±20 V
    Rds On 6@10V mOhm
    SKU: STD80N4F6 Поставщик: по запросу