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Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R

The FETKY family of Co-Pack HEXFET MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.
  • Co-Pack N-channel HEXFET® Power MOSFET and Schottky Diode
  • Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output
  • Low Conduction Losses
  • Low Switching Losses
  • Low Vf Schottky Rectifier
  • Lead-Free

Характеристики

Бренд Infineon
Описание продукта 5 x 4 x 1.5 mm
Рабочая температура -55 to 150 °C
Max Proce 260
Msl Level MSL 1 - Unlimited
Schedule B 8541290080
HTSN 8541290095
Channel Type N
Supplier SOIC
Channel Mode Enhancement
Maximum C 8.3 A
Maximum D 30 V
Maximum G ±12 V
Rds On 25@4.5V mOhm
SKU: IRF7807D2TRPBF Поставщик: по запросу