Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R
These devices are 30 V N-channel Power MOSFETs realized using ST`s proprietary STripFET VI technology. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
RDS(on)* Qgindustry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness
Характеристики
| Бренд | STMicroelectronics |
|---|---|
| Описание продукта | 10.4 x 9.35 x 4.6 mm |
| Рабочая температура | -55 to 175 °C |
| Max Proce | 245 |
| Msl Level | MSL 1 - Unlimited |
| Schedule B | 8541290080 |
| HTSN | 8541290075 |
| Channel Type | N |
| Supplier | D2PAK |
| Channel Mode | Enhancement |
| Maximum C | 80 A |
| Maximum D | 30 V |
| Maximum G | ±20 V |
| Typical T | 20 ns |
| Typical T | 50 ns |
| Rds On | 3@10V mOhm |
| Typical F | 20 ns |
| Typical R | 90 ns |
SKU: STB155N3H6