Trans MOSFET N-CH 30V 6.5A 6-Pin MicroFET EP T/R
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench process that has been optimized for r DS(on) switching performance.
- Max r DS(on) = 23 m O at V GS = 10 V, I D = 6.5 A
- Max r DS(on) = 30 m O at V GS = 4.5 V, I D = 6.0 A
- High performance trench technology for extremely low r DS(on)
- Fast switching speed
- RoHS Compliant
Характеристики
| Бренд | ON Semiconductor |
|---|---|
| Описание продукта | 2 x 2 x 0.75 mm |
| Рабочая температура | -55 to 150 °C |
| Msl Level | 1 |
| Schedule B | 8541290080 |
| HTSN | 8541290095 |
| Страна происхождения | United States |
| Channel Type | N |
| Supplier | MicroFET EP |
| Channel Mode | Enhancement |
| Maximum C | 6.5 A |
| Maximum D | 30 V |
| Maximum G | ±20 V |
| Typical T | 5 ns |
| Typical T | 11 ns |
| Rds On | 23@10V mOhm |
| Typical F | 1 ns |
| Typical R | 1 ns |
SKU: FDMA8884