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Trans MOSFET N-CH 30V 13A 8-Pin SOIC

This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make this device ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. The IRF7805PbF offers maximum efficiency for mobile CPU core DC-DC converters.
  • N Channel Application Specific MOSFETs
  • Ideal for Mobile DC-DC Converters
  • Low Conduction Losses
  • Low Switching Losses
  • Lead-Free

Характеристики

Бренд Infineon
Описание продукта 5 x 4 x 1.5 mm
Рабочая температура -55 to 150 °C
Max Proce 260
Msl Level MSL 1 - Unlimited
Schedule B 8541290080
HTSN 8541290095
Страна происхождения Thailand
Channel Type N
Supplier SOIC
Channel Mode Enhancement
Maximum C 13 A
Maximum D 30 V
Maximum G ±12 V
Typical T 16 ns
Typical T 38 ns
Rds On 11@4.5V mOhm
Typical F 16 ns
Typical R 20 ns
SKU: IRF7805APBF Поставщик: по запросу