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Trans MOSFET N-CH 30V 116A 3-Pin(2+Tab) D2PAK T/R

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL2203NL) is available for low-profile applications.
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
  • 100% RG Tested
  • Lead-Free

Характеристики

Бренд Infineon
Описание продукта 10.67 x 9.65 x 4.83 mm
Рабочая температура -55 to 175 °C
Max Proce 260
Msl Level MSL 1 - Unlimited
Schedule B 8541290080
HTSN 8541290095
Страна происхождения Китай
Channel Type N
Supplier D2PAK
Channel Mode Enhancement
Maximum C 116 A
Maximum D 30 V
Maximum G ±16 V
Typical T 11 ns
Typical T 23 ns
Rds On 7@10V mOhm
Typical F 66 ns
Typical R 160 ns
SKU: IRL2203NSTRLPBF Поставщик: по запросу